Etude des couches minces de diamant par effet Raman exalté de surface = Diamond films studied by surface enhanced Raman scatteringLOPEZ-RIOS, T; GOMEZ-RODRIGUEZ, J. M.Comptes rendus de l'Académie des sciences. Série II, Mécanique, physique, chimie, astronomie. 1995, Vol 321, Num 2, pp 47-52, issn 1251-8069Article

Surface diffusion of single vacancies on Ge(111)-c(2×8) studied by variable temperature scanning tunneling microscopyBRIHUEGA, I; CUSTANCE, O; GOMEZ-RODRIGUEZ, J. M et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 16, pp 165410.1-165410.8, issn 1098-0121Article

STM study of dynamical effects on submonolayer phases of Pb/Si(1 1 1)CUSTANCE, O; BRIHUEGA, I; VEUILLEN, J.-Y et al.Surface science. 2001, Vol 482-85, pp 878-885, issn 0039-6028, 2Conference Paper

Direct observation of a (3 × 3) phase in α-Pb/Ge(111) at 10 KBRIHUEGA, I; CUSTANCE, O; UGEDA, M. M et al.Physical review letters. 2005, Vol 95, Num 20, pp 206102.1-206102.4, issn 0031-9007Article

Hindered electronic transport in two-dimensional metallic ErSi₂ nanoscale islands on Si(111) : An STM studyBRIHUEGA, I; DUPONT-FERRIER, E; MALLET, P et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 20, pp 205309.1-205309.7, issn 1098-0121Article

Initial stages of Sn adsorption on Si(1 1 1)-(7 x 7)CUSTANCE, O; BRIHUEGA, I; GOMEZ-RODRIGUEZ, J. M et al.Surface science. 2001, Vol 482-85, pp 1406-1412, issn 0039-6028, 2Conference Paper

Field emission interferometry with the scanning tunneling microscopeCAAMANO, A. J; POGORELOV, Y; CUSTANCE, O et al.Surface science. 1999, Vol 426, Num 1, pp L420-L425, issn 0039-6028Article

Current imaging tunneling spectroscopy of metallic deposits on siliconASENJO, A; GOMEZ-RODRIGUEZ, J. M; BARO, A. M et al.Ultramicroscopy. 1992, Vol 42-44, Num A, pp 933-939, issn 0304-3991Conference Paper

Observation of AlGaAs/GaAs multiquantum well structure by scanning tunneling microscopyGOMEZ-RODRIGUEZ, J. M; BARO, A. M; SILVEIRA, J. P et al.Applied physics letters. 1990, Vol 56, Num 1, pp 36-38, issn 0003-6951, 3 p.Article

Scanning tunnelling microscopy and spectroscopy on organic PTCDA films deposited on sulfur passivated GaAs(001) : Organic-inorganic semiconductor interfacesNICOARA, N; CUSTANCE, O; GRANADOS, D et al.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 38, pp S2619-S2629, issn 0953-8984Article

Adsorption and diffusion of single Pb atoms on Si(111)7 x 7 and Si(111)5 x 5 surfaces studied by scanning tunneling microscopyVEUILLEN, J.-Y; GOMEZ-RODRIGUEZ, J. M; BARO, A. M et al.Surface science. 1997, Vol 377-79, pp 847-850, issn 0039-6028Conference Paper

Fractal surfaces of gold and platinum electrodeposits. Dimensionality determination by scanning tunneling microscopyGOMEZ-RODRIGUEZ, J. M; BARO, A. M; VAZQUEZ, L et al.Journal of physical chemistry (1952). 1992, Vol 96, Num 1, pp 347-350, issn 0022-3654Article

New developments in fast image processing and data acquisition for STMBEJAR, M. A; GOMEZ-RODRIGUEZ, J. M; GOMEZ-HERRERO, J et al.Journal of microscopy (Print). 1988, Num 152, pp 619-626, issn 0022-2720, 3Article

Scanning tunneling microscopy study of the Si(111)-(√3 x √3)-Pb mosaic phaseGOMEZ-RODRIGUEZ, J. M; VEUILLEN, J.-Y; CINTI, R. C et al.Surface science. 1997, Vol 377-79, pp 45-49, issn 0039-6028Conference Paper

Measuring the fractal dimension with STM : application to vacuum-evaporated goldGOMEZ-RODRIGUEZ, J. M; ASENJO, A; SALVAREZZA, R. C et al.Ultramicroscopy. 1992, Vol 42-44, Num B, pp 1321-1328, issn 0304-3991Conference Paper

Morphology of porous silicon studied by STM/SEMGOMEZ-RODRIGUEZ, J. M; BARO, A. M; PARKHUTIK, V. P et al.Applied surface science. 1990, Vol 44, Num 3, pp 185-192, issn 0169-4332, 8 p.Article

Topographic imaging of GaAs-microstructured samples by STM and SEMGOMEZ-RODRIGUEZ, J. M; VAZQUEZ, L; BARTOLOME, A et al.Ultramicroscopy. 1989, Vol 30, Num 3, pp 355-358, issn 0304-3991, 4 p.Article

Intrinsic character of the (3 × 3) to (√3 × √3) phase transition in Pb/Si(111)BRIHUEGA, I; DISTANCE, O; PEREZ, Rubén et al.Physical review letters. 2005, Vol 94, Num 4, pp 046101.1-046101.4, issn 0031-9007Article

Imaging cos(s, z): a method to separate the geometric and compositional contributions on STM barrier height profilesGOMEZ-RODRIGUEZ, J. M; GOMEZ-HERRERO, J; BARO, A. M et al.Surface science. 1989, Vol 220, Num 1, pp 152-164, issn 0039-6028, 13 p.Article

Low temperature phases of Pb/Si(1 1 1)CUSTANCE, O; GOMEZ-RODRIGUEZ, J. M; BARO, A. M et al.Surface science. 2001, Vol 482-85, pp 1399-1405, issn 0039-6028, 2Conference Paper

Different types of pore structure in porous siliconPARKHUTIK, V. P; ALBELLA, J. M; MARTINEZ-DUART, J. M et al.Applied physics letters. 1993, Vol 62, Num 4, pp 366-368, issn 0003-6951Article

High Φ values in scanning tunneling microscopy: field emission and tunnel regimesGOMEZ-HERRERO, J; GOMEZ-RODRIGUEZ, J. M; GARCIA, R et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1990, Vol 8, Num 1, pp 445-449, issn 0734-2101Conference Paper

Growth of Si on disordered Si(111)(1 x 1) surfacesVEUILLEN, J. Y; MALLET, P; GOMEZ-RODRIGUEZ, J.-M et al.Surface science. 1998, Vol 402-04, pp 295-298, issn 0039-6028Conference Paper